switch transistor
Place of Origin: |
Jiangsu, China (Mainland) |
Product Detail
Supply Ability: 40,000,0000pcs/month
Certification(s): QS9000, ISO9002
1) Power dissipation: PCM: 0.625W (Tamb= 25oC)
2) Collector current
Supply Ability: 40,000,0000pcs/month
Certification(s): QS9000, ISO9002
1) Power dissipation: PCM: 0.625W (Tamb= 25oC)
2) Collector current: ICM: -0.5 A
3) Collector-base voltage: V(BR)CBO: 40 V
4) Electrical characteristics (Tamb= 25oC unless
otherwise specified):
a) Collector-base breakdown voltage: IC=100,
IE=0 (Min: 40V)
b) Collector-emitter breakdown voltage: IC=0.1mA,
IB=0(Min: 25V)
c) Emitter-base breakdown voltage: IE= 100.IC=0
(Min: 5V)
d) Collector cut-off current: VCB= 40 V, IE=0
(Max: 0.1)
e) Collector cut-off current: VCE= 20 V, IB=0
(Max: 0.1)
f) Emitter cut-off current: VEB=5 V, IC=0
(Max: 0.1)
g) DC current gain (note):
i. VCE=1 V, IC= 50mA (Min: 64, Max: 300)
ii. VCE=1 V, IC= 500mA (Min: 40)
h) Collector-emitter saturation voltage: IC= 500mA,
IB= 50 mA (Max: 0.6V)
i) Base-emitter saturation voltage: IC= 500mA,
IB= 50 mA (Max: -1.2V)
j) Base emitter voltage: IE= 100 mA (Max: 1.4V)
k) Transition frequency: VCE=6V, IC=20mA,
F=30MHz (Min: 150MHz)
5) Classification of HFE(1):
Min Order Quantity:10,000pcs
Payment Term:T/T, L/C, D/P
Delivery Time:7 work days
Price Term:FOB
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