circuit transistor
Place of Origin: |
Jiangsu, China (Mainland) |
Product Detail
Supply Ability: 40,000,0000pcs/month
Certification(s): QS9000, ISO9002
1) Power dissipation: PCM: 0.2W (Tamb= 25oC)
2) Collector current I
Supply Ability: 40,000,0000pcs/month
Certification(s): QS9000, ISO9002
1) Power dissipation: PCM: 0.2W (Tamb= 25oC)
2) Collector current ICM: -0.15A
3) Collector-base voltage: V(BR)CEO: -50V
4) Operating and storage junction temperature range: TJ,
Tstg:-55 ~ 150 sup>oC
5) Electrical characteristics (Tamb= 25 sup>oC unless otherwise
specified):
a) Collector-base breakdown voltage: IC= -100 uA,
IE=0 (min: -50V)
b) Collector-emitter breakdown voltage: IC= -0.1 mA,
IB=0 (min:-50V)
c) Collector cut-off current: VCB= -50 V, IE=0
(max: 0.1 uA)
d) Emitter cut-off current: VEB= -5 V, IC=0
(max: -0.1uA)
e) DC current gain (note): VCE=-6 V, IC= -2 mA
(min: 130, max: 400)
f) Collector-emitter saturation voltage: IC= -100 mA,
IB= -10 mA (max: -0.3V)
g) Base-emitter saturation voltage: IC= -100mA,
IB= -10 mA (max: -1.1V)
h) Base-emitter voltage: IE= -310 mA (max: -1.45V)
2) Classification of HFE(1):
a) Rank: L
Range: 130-200
b) Rank: H
Range: 200-400
3) Device marking: S1015LT1=BA
Min Order Quantity:10,000pcs
Payment Term:T/T, L/C, D/P
Delivery Time:7 work days
Price Term:FOB
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